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| 2N6989 Silicon NPN Transistor Data Sheet Description Complement to the 2N6987 Semicoa Semiconductors offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N6987J) * JANTX level (2N6987JX) * JANTXV level (2N6987JV) * JANS level (2N6987JS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Applications * General purpose switching * 4 Transistor Array * NPN silicon transistor Features * * * * Hermetically sealed Cerdip ceramic Also available in chip configuration Chip geometry 0400 Reference document: MIL-PRF-19500/559 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25 C Derate linearly above 25OC Operating Junction Temperature Storage Temperature O TC = 25C unless otherwise specified Symbol VCEO VCBO VEBO IC PT TJ TSTG Rating 50 75 6 800 2 11.43 -65 to +200 -65 to +200 Unit Volts Volts Volts mA W mW/C C C Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N6989 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Base Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 0.1 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 500 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts TA = -55C IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 IEBO1 IEBO2 Test Conditions IC = 10 mA VCB = 75 Volts VCB = 60 Volts VCB = 60 Volts, TA = 150C VEB = 6 Volts VEB = 4 Volts Min 50 10 10 10 10 10 Typ Max Units Volts A nA A A nA Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% DC Current Gain Min 50 75 100 100 30 35 0.6 Typ Max 325 300 Units Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Transistor to Transistor Resistance Switching Characteristics Saturated Turn-On Time Saturated Turn-Off Time 1.2 2.0 0.3 1.0 Volts Volts Symbol |hFE| hFE COBO CIBO |RT-T| tON tOFF Test Conditions VCE = 20 Volts, IC = 20 mA, f = 100 MHz VCE = 10 Volts, IC = 1 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 2 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz |VT-T| = 500 Volts Min 2.5 50 Typ Max 10 Units 8 25 1010 pF pF 35 300 ns ns Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com |
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